Charge collection scanning microscopy: Non-conventional applications

Charge collection scanning microscopy (CCSM), using an electron, a photon or an ion probe, is a very popular method for the assessment of semiconductors since it allows one to obtain electrical parameters in the micrometer range, such as potential distribution within the sample, diffusion length and surface recombination velocity. Despite CCSM is a method established since a long time, reevaluation, optimization and modification of the fundamental approaches of the beam induced conductivity are currently taking place, driven by the technological demand. In this contribution a few recent non-conventional applications of the CCSM are reported, specifically concerning with: i. investigations of materials and/or devices "new" for this kind of analysis, such as porous silicon and gallium nitride as well as high resistivity m-V devices, for the determination of electrical characteristics like electric field distribution and space charge region width; ii. recent developments of the CCSM method to achieve a high resolution imaging of defect recombination activity; iii. application of the near-field method to OBIC (Optical Beam Induced Current) to improve its spatial resolution; iv. "in situ" analyses of process-induced surface recombination changes; v. innovative evolutions of CCSM which will benefit specific studies like that of complex integrated circuits, as the "unconnected junction contrast" in ion beam induced charge microscopy. This coincise survey of "non-conventional" applications of CCSM demonstrates that this lively method still nowadays offers surprisingly powerful means of investigations.