Trifluoromethyltriphenodioxazine: Air-stable and high-performance n-type semiconductor

被引：64

作者：

Di, Chong-an ^{[1
]}

Li, Jing ^{[2
]}

Yu, Gui ^{[1
]}

Xiao, Yi ^{[2
]}

Guo, Yunlong ^{[1
]}

Liu, Yunqi ^{[1
]}

Qian, Xuhong ^{[3
,4
]}

Zhu, Daoben ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

[2] Dalian Univ Technol, State Key Lab Fine Chem, Dalian 116012, Peoples R China

[3] E China Univ Sci & Technol, Shanghai Key Lab Chem Biol, Shanghai 200237, Peoples R China

[4] E China Univ Sci & Technol, State Key Lab Bioreactor Engn, Shanghai 200237, Peoples R China

来源：

ORGANIC LETTERS | 2008年 / 10卷 / 14期

关键词：

D O I：

10.1021/ol8008667

中图分类号：

O62 [有机化学];

学科分类号：

070303 ; 081704 ;

摘要：

Two trifluoromethyltriphenodioxazines were efficiently synthesized as active materials for n-type organic field-effect transistors, and their optical and electrochemical properties were characterized. Air-stable and high-performance thin film transistors based on the two compounds were fabricated.

引用

收藏

页码：3025 / 3028

页数：4

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