Field dependent critical trap density for thin gate oxide breakdown

被引：15

作者：

Cheung, KP ^{[1
]}

Liu, CT ^{[1
]}

Chang, CP ^{[1
]}

Colonell, JI ^{[1
]}

Lai, WYC ^{[1
]}

Liu, R ^{[1
]}

Miner, JF ^{[1
]}

Pai, CS ^{[1
]}

Vaidya, H ^{[1
]}

Clemens, JT ^{[1
]}

Hasegawa, E ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol Inc, Murray Hill, NJ 07974 USA

来源：

1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL | 1999年

关键词：

D O I：

10.1109/RELPHY.1999.761592

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We have found that the total trapped negative charge in a thin gate-oxide at the point of breakdown is a strong function of the stress field. This observation is in direct contrast with previous reports in the literature. The field dependent behavior of total trapped charge leads to the conclusion that the critical trap density for breakdown is also field dependent. We use the field dependent hopping conduction to explain why the critical trap density for breakdown in the percolation model should be field dependent.

引用

页码：52 / 56

页数：5

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