Sawyer-Tower hysteresis measurements on micron sized Pb(Zr,Ti)O3 capacitors

被引:19
作者
Bouregba, R
Vilquin, B
Le Rhun, G
Poullain, G
Domenges, B
机构
[1] ISMRA Univ Caen, Lab CRISMAT, F-14050 Caen, France
[2] Univ Caen, CNRS, UMR 6508, F-14050 Caen, France
[3] ISMRA Univ Caen, PHILIPS, Microelect Lab, LAMIP, F-14079 Caen, France
关键词
D O I
10.1063/1.1606533
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We have performed Sawyer-Tower hysteresis measurements on micron sized Pb(Zr,Ti)O-3 (PZT) capacitors prepared on Pt/Ti/SiO2/Si substrates and patterned with a focused ion beam. Owing to a numerical compensating technique, we show that the increase of both linear dielectric constant Er and maximum polarization P-max, when decreasing the size of the capacitors, is artificial and mainly due to the parasitic effect of the probing setup. Moreover, a suitable method is proposed to accurately determine and correct for the additional parasitic capacitance in parallel with the standard capacitor. Under these conditions, the dielectric and ferroelectric properties of micron sized PZT capacitors are found to be quite similar to those measured on a large contact, i.e., the device properties are area independent. (C) 2003 American Institute of Physics.
引用
收藏
页码:4429 / 4435
页数:7
相关论文
共 14 条
[1]   Patterning and switching of nanosize ferroelectric memory cells [J].
Alexe, M ;
Harnagea, C ;
Hesse, D ;
Gösele, U .
APPLIED PHYSICS LETTERS, 1999, 75 (12) :1793-1795
[2]   Characteristics of 0.25 μm ferroelectric nonvolatile memory with a Pb(Zr, Ti)O3 capacitor on a metal/via-stacked plug [J].
Amanuma, K ;
Kobayashi, S ;
Tatsumi, T ;
Maejima, Y ;
Hada, H ;
Yamada, J ;
Miwa, T ;
Koike, H ;
Toyoshima, H ;
Kunio, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4B) :2098-2101
[3]   Nanoscale scanning force imaging of polarization phenomena in ferroelectric thin films [J].
Auciello, O ;
Gruverman, A ;
Tokumoto, H ;
Prakash, SA ;
Aggarwal, S ;
Ramesh, R .
MRS BULLETIN, 1998, 23 (01) :33-42
[4]   Numerical extraction of the true ferroelectric polarization due to switching domains from hysteresis loops measured using a Sawyer-Tower circuit [J].
Bouregba, R ;
Poullain, G .
FERROELECTRICS, 2002, 274 :165-181
[5]   MODIFICATION AND DETECTION OF DOMAINS ON FERROELECTRIC PZT FILMS BY SCANNING FORCE MICROSCOPY [J].
FRANKE, K ;
BESOLD, J ;
HAESSLER, W ;
SEEGEBARTH, C .
SURFACE SCIENCE, 1994, 302 (1-2) :L283-L288
[6]   Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films [J].
Ganpule, CS ;
Stanishevsky, A ;
Aggarwal, S ;
Melngailis, J ;
Williams, E ;
Ramesh, R ;
Joshi, V ;
de Araujo, CP .
APPLIED PHYSICS LETTERS, 1999, 75 (24) :3874-3876
[7]   Scaling of ferroelectric properties in thin films [J].
Ganpule, CS ;
Stanishevsky, A ;
Su, Q ;
Aggarwal, S ;
Melngailis, J ;
Williams, E ;
Ramesh, R .
APPLIED PHYSICS LETTERS, 1999, 75 (03) :409-411
[8]   Relaxation mechanisms in ferroelectric thin film capacitors for FeRAM application [J].
Lohse, O ;
Grossmann, M ;
Bolten, D ;
Boettger, U ;
Waser, R .
INTEGRATED FERROELECTRICS, 2001, 33 (1-4) :39-48
[9]  
NISHI H, 2002, IFFF C 2002 NAR JAP
[10]   Fabrication of ferroelectric Bi4Ti3O12 thin films and micropatterns by means of chemical solution decomposition and electron beam irradiation [J].
Okamura, S ;
Mori, K ;
Tsukamoto, T ;
Shiosaki, T .
INTEGRATED FERROELECTRICS, 1997, 18 (1-4) :311-318