Relaxation mechanisms in ferroelectric thin film capacitors for FeRAM application

In this work decided measuring techniques and procedures based on conventional hysteresis measurements and fast pulse characterization are exploited to emphasize the meaning of the ferroelectric relaxation for the fast read and write access of the: memory cell in the time region of several nanoseconds. The dependence of the transient polarization reversal on the measuring frequency, and the voltage pulse pattern is presented for PZT thin film material. In the light of the extracted data the theoretical models of classical ferroelectric phase transition compared to dissipative charge redistribution is discussed.