Experimental investigation of electronic properties of buried heterointerfaces of LaAlO3 on SrTiO3

被引：48

作者：

Siemons, Wolter ^{[1
,2
,3
]}

Koster, Gertjan ^{[1
]}

Yamamoto, Hideki ^{[1
,4
]}

Geballe, Theodore H. ^{[1
]}

Blank, Dave H. A. ^{[2
,3
]}

Beasley, Malcolm R. ^{[1
]}

机构：

[1] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA

[2] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

[3] Univ Twente, Inst Nanotechnol, MESA, NL-7500 AE Enschede, Netherlands

[4] NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.76.155111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have made very thin films of LaAlO3 on TiO2 terminated SrTiO3 and have measured the properties of the resulting interface in various ways. Transport measurements show a maximum sheet carrier density of 10(16) cm(-2) and a mobility around 10(4) cm(2) V-1 s(-1). In situ ultraviolet photoelectron spectroscopy (UPS) indicates that for these samples a finite density of states exists at the Fermi level. From the oxygen pressure dependence measured in both transport as well as the UPS, we detail, as reported previously by us, that oxygen vacancies play an important role in the creation of the charge carriers and that these vacancies are introduced by the pulsed laser deposition process used to make the heterointerfaces. Under the conditions studied the effect of LaAlO3 on the carrier density is found to be minimal.

引用

页数：5

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