On the determination of energy fluxes at plasma-surface processes

被引：26

作者：

Kersten, H ^{[1
]}

Rohde, D

Steffen, H

Deutsch, H

Hippler, R

Swinkels, GHPM

Kroesen, GMW

机构：

[1] Univ Greifswald, Dept Phys, Greifswald, Germany

[2] Tech Univ Eindhoven, Dept Phys, Eindhoven, Netherlands

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2001年 / 72卷 / 05期

关键词：

D O I：

10.1007/s003390100811

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A summary is given of different methods for the determination of the energy influx and its influence on the thermal balance and energetic conditions of substrate surfaces during plasma processing. The discussed mechanisms include heat radiation and kinetic and potential energy of charged particles and sputtered neutrals. For a few examples such as magnetron sputtering of a-C:H films, sputter deposition of aluminum on microparticles, and titanium deposition in a hollow-cathode are evaporation device the energetic balance of substrates during plasma processing is presented.

引用

页码：531 / 540

页数：10

共 25 条

[1] THE EFFECT OF SUBSTRATE SURFACE-TEMPERATURE ON THE MORPHOLOGY AND QUALITY OF DIAMOND FILMS PRODUCED BY THE OXYACETYLENE COMBUSTION METHOD [J].