INSITU SILICON-WAFER TEMPERATURE-MEASUREMENTS DURING RF ARGON-ION PLASMA-ETCHING VIA FLUOROPTIC THERMOMETRY

被引:63
作者
HUSSLA, I
ENKE, K
GRUNWALD, H
LORENZ, G
STOLL, H
机构
[1] Leybold-Heraeus GmbH, Hanau, West Ger, Leybold-Heraeus GmbH, Hanau, West Ger
关键词
D O I
10.1088/0022-3727/20/7/010
中图分类号
O59 [应用物理学];
学科分类号
摘要
15
引用
收藏
页码:889 / 896
页数:8
相关论文
共 14 条
  • [1] AKASAKA Y, 1974, J JPN SOC APPL PHYS, V43, P493
  • [2] TEMPERATURE-MEASUREMENTS OF GLASS SUBSTRATES DURING PLASMA-ETCHING
    BOND, RA
    DZIOBA, S
    NAGUIB, HM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 335 - 338
  • [3] TARGET HEATING DURING ION-IMPLANTATION AND RELATED PROBLEMS
    BRUEL, M
    BERTHET, B
    FLOCCARI, M
    MICHAUD, JF
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 44 (1-4): : 173 - 179
  • [4] EGERTON EJ, 1982, SOLID STATE TECH AUG, P84
  • [5] EXPERIMENTS ON GAS-COOLING OF WAFERS
    KING, M
    ROSE, PH
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 189 (01): : 169 - 173
  • [6] LAMONT LT, 1979, SOLID STATE TECHNOL, P107
  • [7] MACK ME, ION IMPLANTATION EQU, P22
  • [8] TARGET HEATING DURING ION-IMPLANTATION
    PARRY, PD
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (02): : 622 - 629
  • [9] LOCALIZED SUBSTRATE HEATING DURING ION-IMPLANTATION
    PARRY, PD
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (01): : 111 - 115
  • [10] SCHWARTZ GC, 1981, PLASMA PROCESSING, P133