INSITU SILICON-WAFER TEMPERATURE-MEASUREMENTS DURING RF ARGON-ION PLASMA-ETCHING VIA FLUOROPTIC THERMOMETRY

被引：63

作者：

HUSSLA, I

ENKE, K

GRUNWALD, H

LORENZ, G

STOLL, H

机构：

[1] Leybold-Heraeus GmbH, Hanau, West Ger, Leybold-Heraeus GmbH, Hanau, West Ger

来源：

关键词：

D O I：

10.1088/0022-3727/20/7/010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：889 / 896

页数：8

共 14 条

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