Electron capture in quantum wells via scattering by electrons, holes, and optical phonons

被引:21
作者
Kalna, K
Mosko, M
机构
[1] Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 24期
关键词
D O I
10.1103/PhysRevB.54.17730
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electron-capture times due td the electron-electron (e-e), electron-hole (e-h), and electron-polar optical phonon (e-pop) interactions are calculated in the GaAs quantum well (QW) with electron and hole densities 10(11) cm(-2). The calculated capture times oscillate as a function of the QW width with the same period but with different amplitudes. The e-h capture time is two to four orders larger and the e-e capture time one to three orders larger than the e-pop capture time. The exceptions are the QW widths near resonance minima, where the e-e capture time is only 2-3 times larger and the e-h capture time 10-100 times larger. A different physical origin of the oscillatory behavior is demonstrated for the e-e and e-pop capture times. Effects of exchange and degeneracy on the e-e capture are analyzed. The exchange effect increases the e-e capture time approximately two times while the degeneracy does not change the capture time except for the QW depths and widths near the resonance.
引用
收藏
页码:17730 / 17737
页数:8
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