Simulation of hydrogenated graphene field-effect transistors through a multiscale approach

被引：44

作者：

Fiori, G. ^{[1
]}

Lebegue, S. ^{[2
]}

Betti, A. ^{[1
]}

Michetti, P. ^{[3
]}

Klintenberg, M. ^{[4
]}

Eriksson, O. ^{[4
]}

Iannaccone, G. ^{[1
,5
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz Elettron Informat Tele, I-56122 Pisa, Italy

[2] Nancy Univ, Lab Cristallog Resonance Magnet & Modelisat, CRM2,UMR 7036, CNRS,Inst Jean Barriol, F-54506 Vandoeuvre Les Nancy, France

[3] Univ Wurzburg, Inst Theoret Phys & Astrophys, D-97074 Wurzburg, Germany

[4] Uppsala Univ, Dept Phys & Astron, SE-75120 Uppsala, Sweden

[5] Univ Pisa, Smart Energy Efficient Design SEED Ctr, I-57128 Livorno, Italy

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 15期

基金：

瑞典研究理事会;

关键词：

AUGMENTED-WAVE METHOD;

D O I：

10.1103/PhysRevB.82.153404

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we present a performance analysis of field-effect transistors (FETs) based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semihydrogenated graphene (i.e., graphone). The approach is based on accurate calculations of the energy bands by means of GW approximation, subsequently fitted with a three-nearest neighbor sp(3) tight-binding Hamiltonian, and finally used to compute ballistic transport in transistors based on functionalized graphene. Due to the large energy gap, the proposed devices have many of the advantages provided by one-dimensional graphene nanoribbon FETs, such as large I-on and I-on/I-off ratios, reduced band-to-band tunneling, without the corresponding disadvantages in terms of prohibitive lithography and patterning requirements for circuit integration.

引用

页数：4

共 28 条

[1] PROJECTOR AUGMENTED-WAVE METHOD [J].