Current-Voltage Characteristics of Graphane p-n Junctions

被引：29

作者：

Gharekhanlou, Behnaz ^{[1
]}

Khorasani, Sina ^{[1
]}

机构：

[1] Sharif Univ Technol, Sch Elect Engn, Tehran 113659363, Iran

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 01期

基金：

美国国家科学基金会;

关键词：

Graphane; graphene; p-n junction; GRAPHENE; OXIDE;

D O I：

10.1109/TED.2009.2034494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In contrast to graphene, which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the 2-D geometry, unique transport features of graphene, and the possibility of doping graphane, p and n regions can be defined so that 2-D p-n junctions become feasible with small reverse currents. This paper introduces a basic analysis to obtain the current-voltage characteristics of such a 2-D p-n junction based on graphane. As we show, within the approximation of Shockley's law of junctions, an ideal I-V characteristic for this p-n junction is to be expected.

引用

页码：209 / 214

页数：6

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