Tight-binding description of patterned graphene

被引：11

作者：

Gharekhanlou, Behnaz ^{[1
]}

Alavi, Marjan ^{[1
]}

Khorasani, Sina ^{[1
]}

机构：

[1] Sharif Univ Technol, Sch Elect Engn, Tehran, Iran

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 07期

关键词：

D O I：

10.1088/0268-1242/23/7/075026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The existence of an energy gap of graphene is vital as far as nano-electronic applications such as nano-transistors are concerned. In this paper, we present a method for introducing arbitrary energy gaps through breaking the symmetry point group of graphene. We investigate the tight-binding approximation for the dispersion of pi and pi* electronic bands in patterned graphene including up to five nearest neighbors. As we show by applying special defects in graphene structure, an energy gap appears at Dirac points and the effective mass of fermions also becomes a function of the number of defects per unit cell.

引用

页数：5

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