On the Possibility of Tunable-Gap Bilayer Graphene FET

被引：74

作者：

Fiori, Gianluca ^{[1
]}

Iannaccone, Giuseppe ^{[1
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz, I-56126 Pisa, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 03期

关键词：

Graphene; nonequilibrium Green's function (NEGF); tight-binding Hamiltonian; FIELD-EFFECT TRANSISTORS; SIMULATION; CARBON;

D O I：

10.1109/LED.2008.2010629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We explore the device potential of a tunable-gap bilayer graphene (BG) FET exploiting the possibility of opening a bandgap in BG by applying a vertical electric field via independent gate operation. We evaluate device behavior using atomistic simulations based on the self-consistent solution of the Poisson and Schrodinger equations within the nonequilibrium Green's function formalism. We show that the concept works, but the bandgap opening is not strong enough to suppress hand-to-hand tunneling in order to obtain a sufficiently large I(on)/I(off) ratio for CMOS device operation.

引用

页码：261 / 264

页数：4

共 13 条

[1]

[Anonymous], INT TECHNOLOGY ROADM

[2] Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect [J].