Influence of asymmetric oxide electrode structures on the interface capacity and the failure mechanisms in PZT thin films

被引：8

作者：

Ellerkmann, U ^{[1
]}

Schorn, P

Bolten, D

Boettger, U

Waser, R

Bruchhaus, R

Yamakawa, K

机构：

[1] Rhein Westfal TH Aachen, Inst Werkstoffe & Elektrotech 2, D-52056 Aachen, Germany

[2] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[3] Infineon Technol Japan KK, Isogo Ku, Yokohama, Kanagawa, Japan

[4] Toshiba Co Ltd, Semicond Co, Isogo Ku, Yokohama, Kanagawa, Japan

来源：

INTEGRATED FERROELECTRICS | 2003年 / 52卷

关键词：

oxide electrodes; fatigue; imprint; PZT; interface capacity;

D O I：

10.1080/10584580390254123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of symmetric and asymmetric electrodes including SRO and IrO2 within the electrode structure on the imprint and fatigue behavior in sputtered and CSD derived PbZrxTi1-xO2 (PZT) thin films is investigated. It is found that SRO buffer layers are needed within top and bottom electrode to improve the fatigue behavior. However, for improvement of the imprint behavior, only one SRO buffer layer within either top or bottom electrode is sufficient, whereas IrO2 reveals no improvement of the imprint behavior. Furthermore the direction dependence of the imprint behavior is examined. To examine the influence of the interface capacity on the fatigue mechanism in more detail, the capacity is measured for different PZT film thicknesses during fatigue treatment. It is shown that there is hardly any difference in interface capacity during fatigue.

引用

页码：63 / 71

页数：9

共 11 条

[1] Reversible and irreversible polarization processes in ferroelectric ceramics and thin films [J].

Bolten, D ;

Böttger, U ;

Waser, R .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) :1735-1742

[2] Reversible and irreversible processes in donor-doped Pb(Zr,Ti)O3 [J].

Bolten, D ;

Böttger, U ;

Schneller, T ;

Grossmann, M ;

Lohse, O ;

Waser, R .

APPLIED PHYSICS LETTERS, 2000, 77 (23) :3830-3832

[3]

BRUCHHAUS R, 2002, IN PRESS P MRS M FAL

[4]

Dawber M, 2002, FERROELECTRICS, V268, P35

[5]

ELLERKMANN U, 2002, FERROELECTRICS, V271, P315

[6] The interface screening model as origin of imprint in PbZrxTi1-xO3 thin films.: I.: Dopant, illumination, and bias dependence [J].

Grossmann, M ;

Lohse, O ;

Bolten, D ;

Boettger, U ;

Schneller, T ;

Waser, R .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2680-2687

[7] FERROELECTRIC PROPERTIES AND FATIGUE OF PBZR0.51TI0.49O3 THIN-FILMS OF VARYING THICKNESS - BLOCKING LAYER MODEL [J].

LARSEN, PK ;

DORMANS, GJM ;

TAYLOR, DJ ;

VANVELDHOVEN, PJ .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) :2405-2413

[8] Relaxation mechanism of ferroelectric switching in Pb(Zr,Ti)O3 thin films [J].

Lohse, O ;

Grossmann, M ;

Boettger, U ;

Bolten, D ;

Waser, R .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (04) :2332-2336

[9] Ferroelectric properties of Pb(Zi, Ti)O3 capacitor with thin SrRuO3 films within both electrodes [J].

Morimoto, T ;

Hidaka, O ;

Yamakawa, K ;

Arisumi, O ;

Kanaya, H ;

Iwamoto, T ;

Kumura, Y ;

Kunishima, I ;

Tanaka, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4B) :2110-2113

[10] Investigation of dead-layer thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au thin-film capacitors [J].

Sinnamon, LJ ;

Bowman, RM ;

Gregg, JM .

APPLIED PHYSICS LETTERS, 2001, 78 (12) :1724-1726

← 1 2 →