Effect of annealing on leakage current in Ba0.5Sr0.5TiO3 and Ba0.96Ca0.04Ti0.84Zr0.16O3 thin films with Pt electrodes -: art. no. 032903

被引：14

作者：

Cramer, N ^{[1
]}

Mahmud, A

Kalkur, TS

机构：

[1] Univ Colorado, Colorado Springs, CO 80933 USA

[2] Univ Colorado, Dept Elect & Comp Engn, Colorado Springs, CO 80933 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1990250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ba0.96Ca0.04Ti0.84Zr0.16O3 (BCTZ) and Ba0.5Sr0.5TiO3 (BST) thin films were deposited at a substrate temperature of 450 S C via rf magnetron sputtering to form Pt/BCTZ/Pt and Pt/BST/Pt capacitors. BCTZ thin films hold promise as an alternative to BST in capacitor applications due to the resistance of BCTZ to reducing atmospheres. In order to produce BST films with low dc leakage current, oxygen is routinely used during film growth and often afterwards during anneals. The effect of postannealing the capacitors in either forming gas or oxygen at temperatures up to 700 degrees C (BST) and 800 degrees C (BCTZ) were studied. The leakage mechanism is shown to be dominated by Schottky emission and the Schottky barrier height is reported as a function of anneal gas composition and anneal temperature. (c) 2005 American Institute of Physics.

引用

页数：3

共 18 条

[1]

Baniecki JD, 2003, MATER RES SOC SYMP P, V748, P441

[2] The influence of Mg doping on the materials properties of Ba1-xSrxTiO3 thin films for tunable device applications [J].