Improvement in electrical characteristics of graded manganese doped barium strontium titanate thin films

被引:118
作者
Jain, M
Majumder, SB
Katiyar, RS [1 ]
Miranda, FA
Van Keuls, FW
机构
[1] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA
[2] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA
关键词
D O I
10.1063/1.1560861
中图分类号
O59 [应用物理学];
学科分类号
摘要
Highly (100) textured graded manganese (Mn) doped Ba0.5Sr0.5TiO3 [BST (50/50)] thin films were deposited on lanthanum aluminate substrates using sol-gel technique. We have demonstrated that the graded acceptor doping is a promising technique to reduce the temperature coefficient of capacitance (TCC), loss tangent, and leakage current of BST thin films. In the temperature range between 175 and 260 K the reported TCC of Mn graded BST (50/50) films is less than 5.55x10(-4)/K, which is comparable to the best capacitors known so far. The lower temperature coefficient of the capacitance of the Mn graded films has been argued to be due to the induced compositional heterogeneity resulting into a distribution of the Curie temperature. (C) 2003 American Institute of Physics.
引用
收藏
页码:1911 / 1913
页数:3
相关论文
共 22 条
[1]   Significant suppression of leakage current in (Ba,Sr)TiO3 thin films by Ni or Mn doping [J].
Ahn, KH ;
Baik, S ;
Kim, SS .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2651-2654
[2]   Dielectric enhancement and ferroelectric anomaly of compositionally graded (Pb, Ca)TiO3 thin films derived by a modified sol-gel technique [J].
Bao, DH ;
Yao, X ;
Zhang, LY .
APPLIED PHYSICS LETTERS, 2000, 76 (19) :2779-2781
[3]   Ferroelectric properties of Pb1-3y/2Lay(Zr0.4Ti0.6)O3 structures with La concentration gradients [J].
Boerasu, I ;
Pintilie, L ;
Kosec, M .
APPLIED PHYSICS LETTERS, 2000, 77 (14) :2231-2233
[4]   Large dielectric constant (ε/ε0>6000) Ba0.4Sr0.6TiO3 thin films for high-performance microwave phase shifters [J].
Carlson, CM ;
Rivkin, TV ;
Parilla, PA ;
Perkins, JD ;
Ginley, DS ;
Kozyrev, AB ;
Oshadchy, VN ;
Pavlov, AS .
APPLIED PHYSICS LETTERS, 2000, 76 (14) :1920-1922
[5]   Dielectric materials for applications in microwave communications [J].
Cava, RJ .
JOURNAL OF MATERIALS CHEMISTRY, 2001, 11 (01) :54-62
[6]   Ferroelectricity in sol-gel derived Ba0.8Sr0.2TiO3 thin films using a highly diluted precursor solution [J].
Cheng, JG ;
Meng, XJ ;
Li, B ;
Tang, J ;
Guo, SL ;
Chu, JH ;
Wang, M ;
Wang, H ;
Wang, Z .
APPLIED PHYSICS LETTERS, 1999, 75 (14) :2132-2134
[7]   Tailoring the temperature coefficient of capacitance in ferroelectric varactors [J].
Gevorgian, S ;
Petrov, PK ;
Ivanov, Z ;
Wikborg, E .
APPLIED PHYSICS LETTERS, 2001, 79 (12) :1861-1863
[8]   Dielectric properties of epitaxial BaTiO3 thin films [J].
Hoerman, BH ;
Ford, GM ;
Kaufmann, LD ;
Wessels, BW .
APPLIED PHYSICS LETTERS, 1998, 73 (16) :2248-2250
[9]   Highly textured chemical solution deposited Ba0.5Sr0.5Ti1-xMnxO3 (x ∼ 0 to 5 at%) thin films for microwave dielectric applications [J].
Jain, M ;
Majumder, SB ;
Martinez, A ;
Katiyar, RS ;
Van Keuls, FW ;
Romanofsky, RR ;
Miranda, FA .
INTEGRATED FERROELECTRICS, 2002, 42 :343-355
[10]  
Katiyar RS, 2002, MATER RES SOC SYMP P, V720, P3