Significant suppression of leakage current in (Ba,Sr)TiO3 thin films by Ni or Mn doping

被引:68
作者
Ahn, KH
Baik, S
Kim, SS
机构
[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea
[2] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
关键词
D O I
10.1063/1.1495526
中图分类号
O59 [应用物理学];
学科分类号
摘要
Effects of Ni or Mn doping in (Ba0.5Sr0.5)TiO3 thin films on leakage current behaviors of Pt/(Ba0.5Sr0.5)TiO3/Pt capacitors were investigated. The leakage current level was found to reduce significantly after the doping over a wide range of voltages and temperatures. The leakage current in an undoped capacitor was largely governed by the Fowler-Nordheim tunneling, and its onset voltage was greatly increased in doped capacitors. The suppression of leakage current in doped capacitors appeared to be caused by a widened depletion layer, which decreases the likelihood of tunneling. (C) 2002 American Institute of Physics.
引用
收藏
页码:2651 / 2654
页数:4
相关论文
共 19 条
[1]   Compensation doping of Ba0.7Sr0.3TiO3 thin films [J].
Copel, M ;
Baniecki, JD ;
Duncombe, PR ;
Kotecki, D ;
Laibowitz, R ;
Neumayer, DA ;
Shaw, TM .
APPLIED PHYSICS LETTERS, 1998, 73 (13) :1832-1834
[2]   Charge injection in SrTiO3 thin films [J].
Dietz, GW ;
Waser, R .
THIN SOLID FILMS, 1997, 299 (1-2) :53-58
[3]   Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories [J].
Dietz, GW ;
Schumacher, M ;
Waser, R ;
Streiffer, SK ;
Basceri, C ;
Kingon, AI .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2359-2364
[4]   ELECTRODE INFLUENCE ON THE CHARGE-TRANSPORT THROUGH SRTIO3 THIN-FILMS [J].
DIETZ, GW ;
ANTPOHLER, W ;
KLEE, M ;
WASER, R .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (10) :6113-6121
[5]   Dopant influence on dielectric losses, leakage behaviour, and resistance degradation of SrTiO3 thin films [J].
Hofman, W ;
Hoffmann, S ;
Waser, R .
THIN SOLID FILMS, 1997, 305 (1-2) :66-73
[6]   Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba, Sr)TiO3 thin films [J].
Hwang, CS ;
Lee, BT ;
Kang, CS ;
Lee, KH ;
Cho, HJ ;
Hideki, H ;
Kim, WD ;
Lee, SI ;
Lee, MY .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) :287-295
[7]   A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes [J].
Hwang, CS ;
Lee, BT ;
Kang, CS ;
Kim, JW ;
Lee, KH ;
Cho, HJ ;
Horii, H ;
Kim, WD ;
Lee, SI ;
Roh, YB ;
Lee, MY .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) :3703-3713
[8]   DEPOSITION OF EXTREMELY THIN (BA,SR)TIO3 THIN-FILMS FOR ULTRA-LARGE-SCALE INTEGRATED DYNAMIC RANDOM-ACCESS MEMORY APPLICATION [J].
HWANG, CS ;
PARK, SO ;
CHO, HJ ;
KANG, CS ;
KANG, HK ;
LEE, SI ;
LEE, MY .
APPLIED PHYSICS LETTERS, 1995, 67 (19) :2819-2821
[9]   Leakage current of Al- or Nb-doped Ba0.5Sr0.5TiO3 thin films by rf magnetron sputtering [J].
In, TG ;
Baik, S ;
Kim, S .
JOURNAL OF MATERIALS RESEARCH, 1998, 13 (04) :990-994
[10]   Leakage current behaviors of acceptor- and donor-doped (Ba0.5Sr0.5)TiO3 thin films [J].
Kim, SS ;
Park, C .
APPLIED PHYSICS LETTERS, 1999, 75 (17) :2554-2556