Significant suppression of leakage current in (Ba,Sr)TiO3 thin films by Ni or Mn doping

被引：68

作者：

Ahn, KH

Baik, S

Kim, SS

机构：

[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea

[2] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 05期

关键词：

D O I：

10.1063/1.1495526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of Ni or Mn doping in (Ba0.5Sr0.5)TiO3 thin films on leakage current behaviors of Pt/(Ba0.5Sr0.5)TiO3/Pt capacitors were investigated. The leakage current level was found to reduce significantly after the doping over a wide range of voltages and temperatures. The leakage current in an undoped capacitor was largely governed by the Fowler-Nordheim tunneling, and its onset voltage was greatly increased in doped capacitors. The suppression of leakage current in doped capacitors appeared to be caused by a widened depletion layer, which decreases the likelihood of tunneling. (C) 2002 American Institute of Physics.

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页码：2651 / 2654

页数：4

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