Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs

被引：89

作者：

Li, YM ^{[1
]}

Chou, HM

Lee, JW

机构：

[1] Natl Chiao Tung Univ, Dept Commun Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Microelect & Informat Syst Res Ctr, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2005年 / 4卷 / 05期

关键词：

coverage ratio; device structure; fabrication; fin field-effect transistor (FinFET); gate capacitance; nanodevice; nanowire; omega-shaped-gate; on/off ratio; process technique; quantum correction model; semiconductor devices; subthreshold swing (SS); surrounding gate; three-dimensional (3-D) simulation; turn-on resistance;

D O I：

10.1109/TNANO.2005.851410

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, electrical characteristics of small nanowire fin field-effect transistor (FinFET) are investigated by using a three-dimensional quantum correction simulation. Taking several important electrical characteristics as evaluation criteria, two different nanowire FinFETs, the surrounding-gate and omega-shaped-gate devices, are examined and compared with respect to different ratios of the gate coverage. By calculating the ratio of the on/off current, the turn-on resistance, subthreshold swing, drain-induced channel barrier height lowing, and gate capacitance, it is found that the difference of the electrical characteristics between the surrounding-gate (i.e., the omega-shaped-gate device with 100% coverage) and the omega-shaped-gate nanowire FinFET with 70% coverage is insignificant. The examination presented here is useful in the fabrication of small omega-shaped-gate nanowire FinFETs. It clarifies the main difference between the surrounding-gate and omega-shaped-gate nanowire Fin FETs and exhibits a valuable result that the omega-shaped-gate device with 70% coverage plays an optimal candidate of the nanodevice structure when we consider both the device performance and manufacturability.

引用

页码：510 / 516

页数：7

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