Valley splitting in strained silicon quantum wells

被引:132
作者
Boykin, TB [1 ]
Klimeck, G
Eriksson, MA
Friesen, M
Coppersmith, SN
von Allmen, P
Oyafuso, F
Lee, S
机构
[1] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA
[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[3] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA
关键词
D O I
10.1063/1.1637718
中图分类号
O59 [应用物理学];
学科分类号
摘要
A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for quantum computing architectures. The valley splitting is computed for realistic devices using the quantitative nanoelectronic modeling tool NEMO. A simple, analytically solvable tight-binding model reproduces the behavior of the splitting in the NEMO results and yields much physical insight. The splitting is in general nonzero even in the absence of electric field in contrast to previous works. The splitting in a square well oscillates as a function of S, the number of layers in the quantum well, with a period that is determined by the location of the valley minimum in the Brillouin zone. The envelope of the splitting decays as S-3. The feasibility of observing such oscillations experimentally in Si/SiGe heterostructures is discussed. (C) 2004 American Institute of Physics.
引用
收藏
页码:115 / 117
页数:3
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