Nanometer patterning of epitaxial CoSi2/Si(100) for ultrashort channel Schottky barrier metal-oxide-semiconductor field effect transistors

A nanometer patterning method, based on local oxidation of silicide layers, was used to pattern epitaxial CoSi2 layers. A feature size as small as 50 nm was obtained for 20 nm epitaxial CoSi2 layers on Si(100) after patterning by local rapid thermal oxidation in dry oxygen. A Schottky source/drain metal-oxide-semiconductor field effect transistor with epitaxial CoSi2 on p-Si(100) was fabricated using this nanopatterning method to make the 100 nm gate. The device shows good I-V characteristics at 300 K. (C) 1999 American Institute of Physics. [S0003-6951(99)02503-6].