MOLED:: Simulation of multilayer organic light emitting diodes

MOLED solves the dynamics of electrons and holes in multilayer Organic Light Emitting Diodes (OLED). The carriers are injected on the positive and negative electrodes of the device by tunneling through a potential barrier. Thermal excitation processes across the barrier are also included. In the interior of the device the electron-hole recombination occurs when the two carriers are close enough, according to a model inspired from the one of Langevin. A fraction of these recombined pairs gives photons. The charge transport inside the organic material occurs through hopping. Several choices of mobility formulae are available in the code. MOLED can be used for OLEDs with an arbitrary number of layers. The output consists of numerous fields that describe the device performance. For example, there are the current, the recombination and the charge density distributions, the electric field distribution, the current-voltage characteristics and the device internal quantum efficiency. Program summary Title of program: MOLED Catalogue identifier: ADSG Program summary URL: http://cpc.cs.qub.ac.uk/summaries/ADSG Program obtainable from: CPC Program Library, Queen's University of Belfast, N. Ireland Operating systems under which the program has been tested: Unix, Linux Programming language used: FORTRAN 90 Memory required to execute with typical data: 2 MB No. of bytes in distributed program: 26 942 No. of bits in a word: 64 Peripherals used: permanent disk storage No. of lines in distributed program, including test data, etc.: 3695 Distribution format: tar gzip file Nature of the physical problem: Injection of electrons and holes into an organic electroluminescent material occurs through tunneling from metal electrodes. The transport of carriers inside the molecular medium proceeds by hopping from one molecule to another. The emission of light is a result of their radiative Langevin recombination (for a review see [Scott et al., Synthetic Metals 111-112 (2000) 289; Friend et al., Nature 397 (1999) 121]). Method of solution: The equations governing the time evolution of current, charge density and electric field in the device are solved after discretization in time. An implicit procedure is used to perform the time step. The nonlinear effects, originating from strong dependence of the hopping frequency on charge distribution, are treated within the first order in the implicit method [Press et al., Numerical Recipes, Cambridge Univ. Press, 1986, Ch. 17]. The molecular energy levels are updated at each time step to take into account the Coulomb interactions [Tutis et al., J. Appl. Phys. 89 (2001) 430]. Typical running time: A typical calculation takes a few minutes on DEC Alpha 500 MHz or Pentium 4 1.8 GHz machines. The execution time may vary considerably, depending on the complexity of the problem. Unusual features of the program: This code has a GUI interface for input/output that can be obtained from the URL: http:// lomm.epfl.ch/. (C) 2003 Elsevier B.V. All rights reserved.