Low temperature growth of AlN(0001) on Al(111) using hydrazoic acid (HN3)

被引：15

作者：

Russell, JN ^{[1
]}

Bermudez, VM ^{[1
]}

Leming, A ^{[1
]}

机构：

[1] USN, RES LAB, ELECTR SCI & TECHNOL DIV, WASHINGTON, DC 20375 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.580413

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin films of AlN(0001) were grown by reacting hydrazoic acid (HN3) with an Al(111) substrate at temperatures below 800 K. The resulting films were characterized with Auger electron spectroscopy, low energy electron diffraction (LEED), and infrared reflection-absorption spectroscopy (IRRAS). The energies and line shapes of the Al LVV and N KLL Auger transitions were consistent with those of AIN. A hexagonal LEED pattern, in registry with that of the Al(111) substrate, was observed for the fully nitrided film and was consistent with a single-domain, AlN(0001) surface. Only the A(1) LO phonon mode of AIN, at 886 cm(-1), was observed in IRRAS, indicating a wurtzite-structured film with the c axis normal to the surface plane.

引用

页码：908 / 912

页数：5

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