Effect of interdiffusion on electrical and gas sensor properties of CuO/SnO2 heterostructure

被引：42

作者：

Vasiliev, RB ^{[1
]}

Rumyantseva, MN ^{[1
]}

Podguzova, SE ^{[1
]}

Ryzhikov, AS ^{[1
]}

Ryabova, LI ^{[1
]}

Gaskov, AM ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 57卷 / 03期

关键词：

CuO; heterostructure; interdiffusion; H2S sensor; SnO2;

D O I：

10.1016/S0921-5107(98)00432-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of annealing on the electrical and H2S gas sensor properties of p-CuO/n-SnO2 heterostructures has been investigated. The heterostructures were prepared by magnetron sputtering technique with subsequent oxidation. The depth composition was analyzed by the secondary neutral mass-spectrometry (SNMS) method. The Sn and Cu interdiffusion coefficients at 573 K were estimated as 3 x 10(-14) cm(2) s(-1) and 1 x 10(-15) cm(2) s(-1), respectively. Resistance behavior and high H2S gas sensitivity are associated with the formation of a transitional layer at CuO-SnO2 interface due to interdiffusion processes. (C) 1999 Published by Elsevier Science S.A. All rights reserved.

引用

页码：241 / 246

页数：6

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