Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

被引：62

作者：

Das, S. K. ^{[1
]}

Das, T. D. ^{[1
]}

Dhar, S. ^{[1
]}

de la Mare, M. ^{[2
]}

Krier, A. ^{[2
]}

机构：

[1] Univ Calcutta, Dept Elect Sci, Kolkata 700009, India

[2] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

来源：

INFRARED PHYSICS & TECHNOLOGY | 2012年 / 55卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

Infrared photoluminescence; Bismuth compounds; Liquid phase epitaxy; Crystallites; Characterization; Solubility; TEMPERATURE-DEPENDENCE; VIBRATIONAL-MODES; ENERGY-GAP; BAND-GAP; GAAS1-XBIX; GAASBI; BI; PURIFICATION;

D O I：

10.1016/j.infrared.2011.11.003

中图分类号：

TH7 [仪器、仪表];

学科分类号：

080401 [精密仪器及机械];

摘要：

We report the first observation of photoluminescence (PL) from the dilute bismide alloy GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (1 00) substrates and PL is obtained in the near infrared spectral range (lambda similar to 1.6 mu m). Incorporation of 0.2, 0.3 and 0.4 at% Bi to the layer results in a decrease of band gap energy up to 40 meV as well as an increase of luminescence from the sample. Structural analysis confirms the successful incorporation of Bi consistent with an increase in lattice parameter. Raman spectroscopy measurements indicate vibrational modes due to GaBi as well as to free Bi atoms residing at interstitial spaces. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：156 / 160

页数：5

共 31 条

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Contactless electroreflectance studies of ultra-dilute GaAs1-xBix alloys [J].