Contactless electroreflectance studies of ultra-dilute GaAs1-xBix alloys

被引：6

作者：

Bhusal, L. ^{[1
]}

Ptak, A. J. ^{[1
]}

France, R. ^{[1
]}

Mascarenhas, A. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 03期

关键词：

INVERSION-ASYMMETRY; QUANTUM-WELLS; CONDUCTION-BAND; SPIN PRECESSION; ENERGY-BAND; LAYERS; HETEROSTRUCTURES; ANTILOCALIZATION; SEMICONDUCTORS; EPITAXY;

D O I：

10.1088/0268-1242/24/3/035018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

In this work we report a large effect due to relativistic corrections in the electronic structure of very dilute GaAs1-xBix (x < 0.0025) thick epitaxial layers. The variation of the spin-orbit split-off band for x as small as 0.0001 is reported. Very thick (2-3 mu m) epilayers were grown by molecular-beam epitaxy to isolate the transitions between the conduction band and the spin-orbit split-off band from the epilayer and the substrate, using contactless electroreflectance. Thick epitaxial quality samples with precise control of the spin-orbit splitting are interesting for applications in spin-based electronics.

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页数：4

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