Electron-hole generation and recombination rates for Coulomb scattering in graphene

被引:137
作者
Rana, Farhan [1 ]
机构
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.76.155431
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We calculate electron-hole generation and recombination rates for Coulomb scattering (Auger recombination and impact ionization) in zero band-gap graphene. The conduction and valence band dispersion relation in graphene together with energy and momentum conservation requirements restrict the phase space for Coulomb scattering so that electron-hole recombination times can be much longer than 1 ps for electron-hole densities smaller than 10(12) cm(-2).
引用
收藏
页数:5
相关论文
共 20 条
[1]   Anomaly of optical phonon in monolayer graphene [J].
Ando, Tsuneya .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2006, 75 (12)
[2]   Electronic confinement and coherence in patterned epitaxial graphene [J].
Berger, Claire ;
Song, Zhimin ;
Li, Xuebin ;
Wu, Xiaosong ;
Brown, Nate ;
Naud, Cecile ;
Mayou, Didier ;
Li, Tianbo ;
Hass, Joanna ;
Marchenkov, Atexei N. ;
Conrad, Edward H. ;
First, Phillip N. ;
de Heer, Wait A. .
SCIENCE, 2006, 312 (5777) :1191-1196
[3]  
Coldren L., 1995, Diode lasers and photonic integrated circuits
[4]  
Fetter A. L., 2003, QUANTUM THEORY MANY
[5]  
Harrison P, 2005, QUANTUM WELLS, WIRES AND DOTS: THEORETICAL AND COMPUTATIONAL PHYSICS OF SEMICONDUCTOR NANOSTRUCTURES, 2ND EDITION, P1, DOI 10.1002/0470010827
[6]   Dielectric function, screening, and plasmons in two-dimensional graphene [J].
Hwang, E. H. ;
Das Sarma, S. .
PHYSICAL REVIEW B, 2007, 75 (20)
[7]   Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering [J].
Jena, Debdeep ;
Konar, Aniruddha .
PHYSICAL REVIEW LETTERS, 2007, 98 (13)
[8]   CARRIER LIFETIMES AND THRESHOLD CURRENTS IN HGCDTE DOUBLE HETEROSTRUCTURE AND MULTIQUANTUM-WELL LASERS [J].
JIANG, Y ;
TEICH, MC ;
WANG, WI .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) :6869-6875
[9]   Performance projections for ballistic graphene nanoribbon field-effect transistors [J].
Liang, Gengchiau ;
Neophytou, Neophytos ;
Nikonov, Dmitri E. ;
Lundstrom, Mark S. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (04) :677-682
[10]   Two-dimensional gas of massless Dirac fermions in graphene [J].
Novoselov, KS ;
Geim, AK ;
Morozov, SV ;
Jiang, D ;
Katsnelson, MI ;
Grigorieva, IV ;
Dubonos, SV ;
Firsov, AA .
NATURE, 2005, 438 (7065) :197-200