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Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric

被引：48
作者：
Yang, T.
Xuan, Y.
Zemlyanov, D.
Shen, T.
Wu, Y. Q.
Woodall, J. M.
Ye, P. D. [1 ]
Aguirre-Tostado, F. S.
Milojevic, M.
McDonnell, S.
Wallace, R. M.
机构：
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[3] Univ Texas, Richardson, TX 75083 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 14期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2798499
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A systematic capacitance-voltage study has been performed on GaAs metal-oxide-semiconductor (MOS) structures with atomic-layer-deposited HfO2/Al2O3 nanolaminates as gate dielectrics. A HfO2/Al2O3 nanolaminate gate dielectric improves the GaAs MOS characteristics such as dielectric constant, breakdown voltage, and frequency dispersion. A possible origin for the widely observed larger frequency dispersion on n-type GaAs than p-type GaAs is discussed. Further experiments show that the observed hysteresis is mainly from the mobile changes and traps induced by HfO2 in bulk oxide instead of those at oxide/GaAs interface. (C) 2007 American Institute of Physics.
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页数：3
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