InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

被引：87

作者：

Goel, N. ^{[1
]}

Majhi, P.

Chui, C. O.

Tsai, W.

Choi, D.

Harris, J. S.

机构：

[1] Intel Corp, Santa Clara, CA 95052 USA

[2] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期

关键词：

D O I：

10.1063/1.2363959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of various process conditions on the structural integrity and electrical properties of Al/HfO2/p-In0.13Ga0.87As metal-oxide-semiconductor capacitors was investigated. Room temperature capacitance voltage measurements revealed postdielectric deposition anneal reduced hysteresis by more than 0.5 V and sulfur passivation of InGaAs improved the capacitance frequency dispersion properties as well as reduced interface trap density. At V=V-FB-1 V, the leakage current densities similar to 1.3x10(-7), 0.4x10(-6), and 1.3x10(-6) A/cm(2) were measured in devices with annealed HfO2 (110 and 32 A) and sulfur-passivated InGaAs (110 A unannealed HfO2), respectively. Transmission electron microscopy revealed sharp epitaxial InGaAs/crystalline HfO2 and GaAs/InGaAs interfaces. (c) 2006 American Institute of Physics.

引用

页数：3

共 13 条

[1]

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[2]

Datta S, 2005, INT EL DEVICES MEET, P783

[3] HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition -: art. no. 152904 [J].