Integrity of hafnium silicate/silicon dioxide ultrathin films on Si

被引：34

作者：

Morais, J

Miotti, L

Soares, GV

Teixeira, SR

Pezzi, R

Bastos, KP

Baumvol, IJR

Rotondaro, ALP

Chambers, JJ

Visokay, MR

Colombo, L

机构：

[1] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

[2] Texas Instruments Inc, Silicon Technol Dev, Dallas, TX 75265 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 16期

关键词：

D O I：

10.1063/1.1515112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rapid thermal annealing at 1000 degreesC of (HfO2)(1-x)(SiO2)(x) pseudobinary alloy films deposited on Si were performed in N-2 or O-2 atmospheres. The effects on the atomic transport, structure, and composition were investigated using isotopic substitution of oxygen, high-resolution transmission electron microscopy, nuclear reaction analyses, narrow nuclear reaction resonance profiling, and grazing angle x-ray reflection. (C) 2002 American Institute of Physics.

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页码：2995 / 2997

页数：3

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