Laser-induced chemical vapour deposition of Si/C/H materials from monoorganylsilanes

被引：21

作者：

Pola, J

Bastl, Z

Subrt, J

Abeysinghe, JR

Taylor, R

机构：

[1] UNIV SUSSEX,SCH CHEM & MOLEC SCI,BRIGHTON BN1 9QJ,E SUSSEX,ENGLAND

[2] ACAD SCI CZECH REPUBL,J HEYROVSKY INST PHYS CHEM,CR-18223 PRAGUE,CZECH REPUBLIC

[3] ACAD SCI CZECH REPUBL,INST INORGAN CHEM,CR-25068 PRAGUE,CZECH REPUBLIC

来源：

JOURNAL OF MATERIALS CHEMISTRY | 1996年 / 6卷 / 02期

关键词：

D O I：

10.1039/jm9960600155

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Laser-induced photolysis of monoorganylsilanes RSiH(3) (R = H2C = CH, HC = C, CIHC = CH and H2C = CHCH2) produces thin Si/C/H films, thought to be saturated polycarbosilanes of low hydrogen content, and formed from unsaturated transients generated upon elimination of hydrogen and ethyne from the RSiH(3) molecules. The films incorporate oxygen upon exposure to the atmosphere.

引用

页码：155 / 160

页数：6

共 47 条

[1] CO-PYROLYSIS OF HYDROCARBONS AND SIET4 FOR THE SYNTHESIS OF GRADUATED SIXC1-X CERAMIC THIN-FILMS BY CHEMICAL-VAPOR-DEPOSITION [J].