The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene

被引：234

作者：

Kalbac, Martin ^{[1
,3
]}

Reina-Cecco, Alfonso ^{[2
]}

Farhat, Hootan ^{[2
]}

Kong, Jing ^{[3
]}

Kavan, Ladislav ^{[1
]}

Dresselhaus, Mildred S. ^{[3
,4
]}

机构：

[1] Acad Sci Czech Republic, J Heyrovsky Inst Phys Chem, VVI, CZ-18223 Prague 8, Czech Republic

[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[3] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[4] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

ACS NANO | 2010年 / 4卷 / 10期

关键词：

graphene; Raman spectroscopy; doping; electrochemical gating; spectroelectrochemistry; WALLED CARBON NANOTUBES; SCATTERING; GRAPHITE;

D O I：

10.1021/nn1010914

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electrochemical charging has been applied to study the influence of doping on the intensity of the various Raman features observed in chemical vapor-deposition-grown graphene. Three different laser excitation energies have been used to probe the influence of the excitation energy on the behavior of both the G and G' modes regarding their dependence on doping. The intensities of both the G and G' modes exhibit a significant but different dependence on doping. While the intensity of the G' band monotonically decreases with Increasing magnitude of the electrode potential (positive or negative), for the G band a more complex behavior has been found. The striking feature is an increase of the Raman intensity of the G mode at a high value of the positive electrode potential. Furthermore, the observed increase of the Raman intensity of the G mode is found to be a function of laser excitation energy.

引用

页码：6055 / 6063

页数：9

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