Finding universal correlations between cationic disorder and low field magnetoresistance in FeMo double perovskite series

被引：231

作者：

Garcia-Hernández, M ^{[1
]}

Martínez, JL ^{[1
]}

Martínez-Lope, MJ ^{[1
]}

Casais, MT ^{[1
]}

Alonso, JA ^{[1
]}

机构：

[1] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.86.2443

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We search for general patterns that explain the low field magnetoresistance at low temperatures in the system A((2-x))A(x)'FeMoO6. The observed linear dependence of the low field magnetoresistance with the saturation magnetization for the series is related to the antisite disorder at the Fe and Mo sites. This is explained in terms of a spin dependent crossing of intragranular barriers originated from the presence of antiferromagnetic SrFeO3 patches that naturally develop when antisite disorder occurs in the double perovskite. The presence of a moderate level of antisite disorder is at the very root of low field magnetoresistance although effects such as disorder distribution, connectivity, or morphology add their contribution.

引用

页码：2443 / 2446

页数：4

共 17 条

[11] Device physics - Magnetoelectronics [J].