Electrical spin injection and transport in semiconductor spintronic devices

被引:27
作者
Jonker, BT
Erwin, SC
Petrou, A
Petukhov, AG
机构
[1] USN, Res Lab, Div Mat Sci & Technol, Washington, DC 20375 USA
[2] USN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA
[3] SUNY Buffalo, Buffalo, NY 14260 USA
[4] S Dakota Sch Mines & Technol, Dept Phys, Rapid City, SD 57701 USA
关键词
ferromagnetic; materials; semiconductors; spin injection; spin-polarized materials; spintronics;
D O I
10.1557/mrs2003.216
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Semiconductor heterostructures that utilize carrier spin as a new degree of freedom offer entirely new functionality and enhanced performance over conventional devices. We describe the essential requirements for implementing this technology, focusing on the materials and interface issues relevant to electrical spin injection into a semiconductor. These are discussed and illustrated in the context of several prototype semiconductor spintronic devices, including spin-polarized light-emitting diodes and resonant tunneling structures such as the resonant interband tunneling diode.
引用
收藏
页码:740 / 748
页数:9
相关论文
共 90 条
[31]   Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures induced by photon excitation [J].
Hirohata, A ;
Xu, YB ;
Guertler, CM ;
Bland, JAC ;
Holmes, SN .
PHYSICAL REVIEW B, 2001, 63 (10) :4
[32]   Spin Hall effect [J].
Hirsch, JE .
PHYSICAL REVIEW LETTERS, 1999, 83 (09) :1834-1837
[33]   Spin-polarized transport in a two-dimensional electron gas with interdigital-ferromagnetic contacts [J].
Hu, CM ;
Nitta, J ;
Jensen, A ;
Hansen, JB ;
Takayanagi, H .
PHYSICAL REVIEW B, 2001, 63 (12)
[34]  
ILEGEMS M, 1985, TECHNOLOGY PHYS MOL, P119
[35]  
Jain M., 1991, Diluted Magnetic Semiconductors, DOI [10.1142/1065, DOI 10.1142/1065]
[36]   Spin-valve effects in nickel/silicon/nickel junctions [J].
Jia, YQ ;
Shi, RC ;
Chou, SY .
IEEE TRANSACTIONS ON MAGNETICS, 1996, 32 (05) :4707-4709
[37]   Spin-polarized Zener tunneling in (Ga,Mn)As [J].
Johnston-Halperin, E ;
Lofgreen, D ;
Kawakami, RK ;
Young, DK ;
Coldren, L ;
Gossard, AC ;
Awschalom, DD .
PHYSICAL REVIEW B, 2002, 65 (04) :1-4
[38]   Progress toward electrical injection of spin-polarized electrons into semiconductors [J].
Jonker, BT .
PROCEEDINGS OF THE IEEE, 2003, 91 (05) :727-740
[39]   Quantifying electrical spin injection: Component-resolved electroluminescence from spin-polarized light-emitting diodes [J].
Jonker, BT ;
Hanbicki, AT ;
Park, YD ;
Itskos, G ;
Furis, M ;
Kioseoglou, G ;
Petrou, A ;
Wei, X .
APPLIED PHYSICS LETTERS, 2001, 79 (19) :3098-3100
[40]   Robust electrical spin injection into a semiconductor heterostructure [J].
Jonker, BT ;
Park, YD ;
Bennett, BR ;
Cheong, HD ;
Kioseoglou, G ;
Petrou, A .
PHYSICAL REVIEW B, 2000, 62 (12) :8180-8183