Fabrication and properties of As-doped ZnO films grown on GaAs(001) substrates by radio frequency (rf) magnetron sputtering

被引:22
作者
Lee, W
Hwang, DK
Jeong, MC
Lee, M
Oh, MS
Choi, WK
Myoung, JM [1 ]
机构
[1] Yonsei Univ, Sch Mat Sci & Engn, Dept Met Engn, Informat & Elect Mat Res Lab, Seoul 120749, South Korea
[2] Korea Inst Sci & Technol, Thin Film Technol Res Ctr, Seoul 130650, South Korea
关键词
ZnO; GaAs; As doping; rf magnetron sputtering;
D O I
10.1016/S0169-4332(03)00947-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
ZnO thin films were grown on GaAs(0 0 1) substrate to study the feasibility of making As-doped textured ZnO films for possible optical device application using radio frequency (rf) magnetron sputtering. It was demonstrated that highly c-axis oriented ZnO crystal with uniformly doped As could be grown using this deposition technique. Crystallinity was shown to improve with higher processing temperature. Photoluminescence spectroscopy, supplemented by cathodo-lummescence imaging, showed that the ZnO films have good optical quality with strong near band emission peak at 3.3 eV and spatially homogeneous luminescence indicating possibility of producing As-doped ZnO films with good crystallinity and optical properties using the technique used herein. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:32 / 37
页数:6
相关论文
共 22 条
[1]  
[Anonymous], 1975, THEORY ELASTICITY
[2]   Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers [J].
Ashrafi, ABMA ;
Ueta, A ;
Avramescu, A ;
Kumano, H ;
Suemune, I ;
Ok, YW ;
Seong, TY .
APPLIED PHYSICS LETTERS, 2000, 76 (05) :550-552
[3]   Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE [J].
Bagnall, DM ;
Chen, YF ;
Shen, MY ;
Zhu, Z ;
Goto, T ;
Yao, T .
JOURNAL OF CRYSTAL GROWTH, 1998, 184 :605-609
[4]   Effects of growth temperature on the properties of ZnO/GaAs prepared by metalorganic chemical vapor deposition [J].
Bang, KH ;
Hwang, DK ;
Lim, SW ;
Myoung, JM .
JOURNAL OF CRYSTAL GROWTH, 2003, 250 (3-4) :437-443
[5]   GROWTH AND PROPERTIES OF PIEZOELECTRIC AND FERROELECTRIC-FILMS [J].
FRANCOMBE, MH ;
KRISHNASWAMY, SV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :1382-1390
[6]   CONTROL OF PREFERRED ORIENTATION FOR ZNOX FILMS - CONTROL OF SELF-TEXTURE [J].
FUJIMURA, N ;
NISHIHARA, T ;
GOTO, S ;
XU, JF ;
ITO, T .
JOURNAL OF CRYSTAL GROWTH, 1993, 130 (1-2) :269-279
[7]  
GONG H, 2003, MAT SCI SEMICOND, V55, P31
[8]   CRACK DEFLECTION AT AN INTERFACE BETWEEN DISSIMILAR ELASTIC-MATERIALS - ROLE OF RESIDUAL-STRESSES [J].
HE, MY ;
EVANS, AG ;
HUTCHINSON, JW .
INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES, 1994, 31 (24) :3443-3455
[9]   INTERBAND MAGNETOREFLECTION OF ZNO [J].
HUMMER, K .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1973, 56 (01) :249-260
[10]   THERMALLY STABLE ZNO FILMS DEPOSITED ON GAAS SUBSTRATES WITH A SIO2 THIN BUFFER LAYER [J].
KIM, HK ;
MATHUR, M .
APPLIED PHYSICS LETTERS, 1992, 61 (21) :2524-2526