Skipping orbits and enhanced resistivity in large-diameter InAs/GaSb antidot lattices

被引:18
作者
Eroms, J [1 ]
Zitzlsperger, M
Weiss, D
Smet, JH
Albrecht, C
Fleischmann, R
Behet, M
De Boeck, J
Borghs, G
机构
[1] Univ Regensburg, D-93040 Regensburg, Germany
[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[3] Max Planck Inst Stromungsforsch, D-37073 Gottingen, Germany
[4] IMEC, B-3001 Louvain, Belgium
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 12期
关键词
D O I
10.1103/PhysRevB.59.R7829
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. For samples with large antidot diameter, we found a broad maximum of classical origin around 2.5 T in addition to the usual commensurability features at low magnetic fields. The broad maximum can be ascribed to a class of orbits involving multiple reflections on a single antidot. This is shown by both a simple transport calculation based on a classical Kubo formula and an analysis of the Poincare sections at different magnetic-field values. At low temperatures we observe weak 1/B-periodic oscillations superimposed on the classical maximum. [S0163-1829(99)50512-2].
引用
收藏
页码:R7829 / R7832
页数:4
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