Charge accumulation at InAs surfaces

被引：256

作者：

Olsson, LO

Andersson, CBM

Hakansson, MC

Kanski, J

Ilver, L

Karlsson, UO

机构：

[1] ROYAL INST TECHNOL,DEPT PHYS,S-10044 STOCKHOLM,SWEDEN

[2] LUND UNIV,DEPT SYNCHROTRON RADIAT RES,S-22362 LUND,SWEDEN

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.76.3626

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Angle-resolved photoelectron spectroscopy has been used to directly prove the existence of a charge accumulation layer at clean InAs surfaces. The formation of an accumulation layer is shown to be a common property of polar InAs surfaces, with the precise surface Fermi level position above the conduction band minimum determined by the surface geometry. The emission from states in the accumulation layer is studied with respect to its photon energy and angular dependence.

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收藏

页码：3626 / 3629

页数：4

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