Line broadening caused by Coulomb carrier-carrier correlations and dynamics of carrier capture and emission in quantum dots

被引：45

作者：

Uskov, AV

Magnusdottir, I

Tromborg, B

Mork, J

Lang, R

机构：

[1] PN Lebedev Phys Inst, Moscow 117924, Russia

[2] Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark

[3] Tokyo Univ Agr & Technol, Dept Appl Phys, Koganei, Tokyo 1848588, Japan

[4] Japan Sci & Technol Corp, CREST, Tokyo, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 11期

关键词：

D O I：

10.1063/1.1401778

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mechanisms of pure dephasing in quantum dots due to Coulomb correlations and the dynamics of carrier capture and emission are suggested, and a phenomenological model for the dephasing is developed. It is shown that, if the rates of these capture and emission processes are sufficiently high, significant homogeneous line broadening of the order of several meV can result. (C) 2001 American Institute of Physics.

引用

页码：1679 / 1681

页数：3

共 12 条

[1] Homogeneous line broadening in individual semiconductor quantum dots by temperature fluctuations [J].