The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers

We describe measurements of the threshold current I-th and spontaneous emission characteristics of InGaAs (P)-based 1.5-mu m compressively strained multiple-quantum-well semiconductor lasers from 90 K to above room temperature. We show that below a break-point temperature, T-B approximate to 130 K, I-th and its temperature dependence are governed by the radiative current. Above this temperature, a thermally activated Auger recombination process becomes the dominant recombination mechanism responsible for both I-th and its temperature sensitivity. At room temperature nonradiative Auger recombination is found to account for approximately 80% of the threshold current in these devices.