Investigation of the properties of plasma-enhanced chemical vapor deposited silicon nitride and its effect on silicon surface passivation

Silicon nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) are used for a variety of applications in integrated circuit and solar cell industries, such as surface passivation and insulation. The objective of this article is to investigate and understand the impact of the PECVD deposition parameters on the silicon surface passivation and establish the correlation between the properties of the silicon nitride and the ensuing silicon surface recombination velocity. All the films were annealed at 350 degrees C far 20 min in a rapid thermal annealer after the deposition. It is shown that bonded hydrogen and positive charge in the annealed PECVD silicon nitride films have the opposite effect on the surface passivation. The surface recombination velocity decreases with the increase in the positive charge density and the decrease in the bonded hydrogen content. It is found that the deposition temperature has the most influence on achieving low surface recombination velocity. Higher deposition temperature in the range of 200-300 degrees C produces lower surface recombination velocity. Optimal silicon nitride deposition conditions resulted in a surface recombination velocity of 119 cm/s on 2 Omega cm p-type silicon. (C) 1998 American Institute of Physics. [S0021-8979(98)05511-X].