A BACKSIDE HYDROGENATION TECHNIQUE FOR DEFECT PASSIVATION IN SILICON SOLAR-CELLS

被引：6

作者：

SOPORI, BL ^{[1
]}

机构：

[1] SOLAVOLT INT,PHOENIX,AZ

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.342391

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5264 / 5266

页数：3

共 10 条

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[6] EFFECT OF LOW-ENERGY HYDROGEN-ION IMPLANTATION ON DENDRITIC WEB SILICON SOLAR-CELLS [J].

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SINGH, R .

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[7] PASSIVATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON [J].

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SINGH R, 1984, 5TH P EUR PHOT SOL E, P1064

[9] FABRICATION OF DIODE-ARRAYS FOR PHOTOVOLTAIC CHARACTERIZATION OF SILICON SUBSTRATES [J].

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[10] BONDING AND THERMAL-STABILITY OF IMPLANTED HYDROGEN IN SILICON [J].

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