Low temperature growth and dimension-dependent photoluminescence efficiency of semiconductor nanowires

被引：15

作者：

Hsu, YJ ^{[1
]}

Lu, SY ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu 30043, Taiwan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 81卷 / 03期

关键词：

D O I：

10.1007/s00339-004-2714-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low temperature growth and dimension dependent photoluminescence (PL) efficiency of semiconductor nanowires were investigated with CdS as a model system. The CdS nanowires were prepared with a simple, low temperature metalorganic chemical vapor deposition (MOCVD) process via the vapor-liquid-solid (VLS) mechanism. The low growth temperature of 360 degrees C was made possible with a newly developed single-source precursor of CdS and by using sputtered Au as the catalyst for the VLS growth. The length and diameter of the nanowires were adjusted by reaction time and sputtering conditions of Au, respectively. Nanowires of up to several mu m in length and 20 to 200 nm in diameter were obtained. The PL quantum yield of the nanowires was found to decrease with increasing wire length, but to increase with decreasing wire diameter. This dimension-dependent PL efficiency of one-dimensional nanostructure, unlikely resulting from the quantum size confinement effect, appears to be a new observation that carries application significance.

引用

页码：573 / 578

页数：6

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