A simple method to synthesize nanowires

By a simple method, that is, by heating raw materials in a flowing gas at ambient pressure, Si3N4, Ga2O3, and ZnO nanowires, SiC nanocables, and SiO2 amorphous nanowires are synthesized without metal catalysts. The diameters of these one-dimensional nanoscale materials are greatly affected by synthesis temperatures. At suitable synthesis temperatures, their diameters are <100 nm. The growth mechanisms of these nanowires are discussed preliminarily.