Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

被引：152

作者：

de la Mata, Maria ^{[1
]}

Magen, Cesar ^{[2
,3
]}

Gazquez, Jaume ^{[1
]}

Utama, Muhammad Iqbal Bakti ^{[4
]}

Heiss, Martin ^{[5
]}

Lopatin, Sergei ^{[6
]}

Furtmayr, Florian ^{[7
,8
]}

Fernandez-Rojas, Carlos J. ^{[1
,9
]}

Peng, Bo ^{[4
]}

Ramon Morante, Joan ^{[10
,11
]}

Rurali, Riccardo ^{[1
]}

Eickhoff, Martin ^{[7
]}

Fontcuberta i Morral, Anna ^{[5
]}

Xiong, Qihua ^{[4
,12
]}

Arbiol, Jordi ^{[1
,13
]}

机构：

[1] ICMAB CSIC, Inst Ciencia Mat Barcelona, E-08193 Bellaterra, CAT, Spain

[2] Univ Zaragoza, Inst Nanociencia Aragon ARAID, Lab Microscopias Avanzadas, Zaragoza 50018, Spain

[3] Univ Zaragoza, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain

[4] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

[5] Ecole Polytech Fed Lausanne, Lab Mat Semicond, CH-1015 Lausanne, Switzerland

[6] FEI Co, NL-5600 KA Eindhoven, Netherlands

[7] Univ Giessen, I Physikal Inst, D-35392 Giessen, Germany

[8] Tech Univ Munich, Walter Schottky Inst, DE-85748 Garching, Germany

[9] Univ Los Andes, Fac Ciencias, Dept Fis, Grp Fis Mat Condensada, Merida 5101, Venezuela

[10] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain

[11] IREC, Catalonia Inst Energy Res, Sant Adria Del Besos 08930, Spain

[12] Nanyang Technol Univ, Sch Elect & Elect Engn, Div Microelect, Singapore 639798, Singapore

[13] ICREA, Barcelona 08010, CAT, Spain

来源：

NANO LETTERS | 2012年 / 12卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

Dumbbell; polarity; annular bright field; ABF; high angle annular dark field; HAADF; scanning transmission electron microscopy; STEM; semiconductor nanowires; ABERRATION-CORRECTED TEM; DER-WAALS EPITAXY; SILICON NANOWIRES; LIGHT-ELEMENTS; STACKING-FAULT; CRYSTAL; RESOLUTION; MECHANISM; ARRAYS; ORDER;

D O I：

10.1021/nl300840q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semiconductor nanowires (NWs) from binary compounds in two extreme cases: (i) when the dumbbell is formed with atoms of similar mass (GaAs) and (ii) in the case where one of the atoms is extremely light (N or O: ZnO and GaN/AlN). The theoretical fundaments of these procedures allow us to overcome the main challenge in the identification of dumbbell polarity. It resides in the separation and identification of the constituent atoms in the dumbbells. The proposed experimental via opens new routes for the fine characterization of nanostructures, e.g., in electronic and optoelectronic fields, where the polarity is crucial for the understanding of their physical properties (optical and electronic) as well as their growth mechanisms.

引用

页码：2579 / 2586

页数：8

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