Preparation and characterization of indium selenide thin films from a chemical route

被引：61

作者：

Pathan, HM ^{[1
]}

Kulkarni, SS ^{[1
]}

Mane, RS ^{[1
]}

Lokhande, CD ^{[1
]}

机构：

[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2005年 / 93卷 / 01期

关键词：

indium selenide; chemical deposition; electrical resistivity; nanocrystalline film;

D O I：

10.1016/j.matchemphys.2005.01.063

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of nanocrystalline indium selenide thin films by using a modified chemical bath deposition method was studied. In order to obtain the indium selenide thin films, the preparative conditions, such as concentration, pH of cationic precursors, adsorption, reaction and rinsing time duration were optimized. The growth of the thin films was found to be 6.3 nm per cycle. The films were characterized by various experimental methods for structural, surface morphological, compositional, optical and electrical properties. The films were nanocrystalline and showed the phases InSe, In2Se3 and In6Se7. The surface of the film was rough. The absorbance of the film was found to be high (10(4) cm(-1)) and the optical band gap was 2.5 eV. The electrical resistivity was of the order of 10(6) Omega cm with n-type electrical conductivity. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：16 / 20

页数：5

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