Achieving ambipolar vertical organic transistors via nanoscale interface modification

被引：33

作者：

Li, Sheng-Han ^{[1
]}

Xu, Zheng ^{[1
]}

Ma, Liping ^{[1
]}

Chu, Chih-Wei ^{[1
]}

Yang, Yang ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Henry Samueli Sch Engn & Appl Sci, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 08期

关键词：

D O I：

10.1063/1.2773749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Organic field-effect transistors have been the subject of much recent inquiry due to their unique properties. Here, the authors report an ambipolar vertical organic field-effect transistor, which consists of a capacitor cell vertically stacked with an organic active cell, separated by a thin source electrode. By inserting a nanoscale transition-metal-oxide layer at the source/organic interface, the authors fabricated the organic ambipolar transistors with low working voltage and high current output. The thin transition-metal oxide and partial oxidization metal grains form a unique nanostructure that balances the injection barrier height of two types of carriers at the source/organic contact. (C) 2007 American Institute of Physics.

引用

页数：3

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