Highly efficient hybrid solar cells based on an octithiophene-GaAs heterojunction

被引:28
作者
Ackermann, J
Videlot, C
El Kassmi, A
Guglielmetti, R
Fages, F
机构
[1] CNRS, Lab Chim & Mat Organ Modelisat, GCOM2, UMR 6114,Fac Sci Luminy,Case 901, F-13288 Marseille, France
[2] CNRS, Lab Mat Mol & Biomat, GCOM2, UMR 6114,Fac Sci Luminy,Case 901, F-13288 Marseille, France
关键词
D O I
10.1002/adfm.200305142
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report a new type of hybrid heterojunction solar cell based on rod-like octithiophene (ST) as the organic p-type semiconductor and GaAs(111) as the inorganic n-type semiconductor. By using a semitransparent gold layer as the front contact deposited onto the 8T films, solar-energy conversion efficiencies of up to 4.2% could be obtained. The reduction in the contact resistance at the Au/8T interface induced by iodine doping is found to be a very crucial factor for the high efficiency. Furthermore, we demonstrate that hybrid solar cells can be successfully used to investigate the photovoltaic properties of organic semiconductors in detail. By means of external quantum efficiency (EQE) measurements, the influence of film morphology on the photocurrent collection length in 8T films is studied. The results show that, in hybrid solar cells using highly ordered microcrystalline ST films, an active contribution of the organic-layer semiconductor to the total photocurrent exists. A very large photocurrent collection length of up to 100 nm has been estimated from EQE measurements, indicating that exciton diffusion is very efficient in microcrystalline 8T. On the other hand, the use of nanocrystalline 8T leads to high photocurrent losses in the organic part of the hybrid solar cell. The strong influence of the film morphology on the photocurrent collection in 8T is attributed to a reduction in the exciton diffusion length due to a high trap density in nanocrystalline 8T films. Thus, our results reveal the importance of high crystalline order for obtaining efficient photocurrent collection in 8T films.
引用
收藏
页码:810 / 817
页数:8
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