Performances of a Silicon Drift Chamber as fast scintillator photodetector for gamma-ray spectroscopy

被引：4

作者：

Fiorini, C

Perotti, F

Labanti, C

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[2] CNR, Ist Fis Cosm & Tecnol Relat, I-20133 Milan, Italy

[3] CNR, Ist Tecnol & Studio Radiaz Extrterrestri, I-40129 Bologna, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 03期

关键词：

D O I：

10.1109/23.682431

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performances of a Silicon Drift Chamber (SDC), having a diameter of 3 mm, as scintillation light photodetector have been experimentally evaluated on a prototype of gamma-ray detector employing a GSO crystal of similar cross-section. This detector presents a minimum energy threshold of about 50 keV at room temperature (20 degrees C) or 25 keV at 0 degrees C. The measured energy resolution at room temperature is 22.65% and 8.73% FWHM at 122 keV and 662 keV respectively. These performances were obtained by using a shaping time of 0.5 mu s, which allows to operate at high gamma-ray interaction rate. The effect of the SDC drift-time on the detector gain has been also evaluated.

引用

收藏

页码：483 / 486

页数：4

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