Doping-induced transition from double exchange to charge order in La1-xCaxMnO3 near x = 0.50

被引：66

作者：

Roy, M

Mitchell, JF

Ramirez, AP

Schiffer, P ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[3] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.58.5185

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study a series of the perovskite manganite compounds La1-xCaxMnO3 closely spaced in doping near x = 0.50 where the ground state undergoes a doping-dependent metal-insulator transition (MIT) from a metallic to a charge-ordered state. A significant difference is found between the value of x and the Mn+4 fraction which defines the metal-insulator phase boundary. In the immediate doping regime of the MIT, the resistivity data can be quantitatively described by a model based on the coexistence of two carrier types: nearly localized carriers in the charge-ordered state exhibiting variable-range hopping and a parasitic population of free carriers which is tunable by either magnetic field or stoichiometry.

引用

页码：5185 / 5188

页数：4

共 41 条

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