High-performance thin-film transistors from solution-processed cadmium selenide and a self-assembled multilayer gate dieletric

被引：36

作者：

Byrne, Paul D. ^{[1
,2
]}

Facchetti, Antonio ^{[1
,2
]}

Marks, Tobin J. ^{[1
,2
]}

机构：

[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 12期

关键词：

D O I：

10.1002/adma.200702677

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

TFTs based on solution-processed CdSe films as the semiconductor and a solution-processed nanoscopic self-assembled gate dielectric are fabricated. The devices exhibit high electron mobilities at low operating voltages.

引用

页码：2319 / +

页数：7

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