Towards four-electrode co-planar metal-insulator-metal nanojunctions down to 10 nm

An e-beam nanolithography process with metal lift-off is optimized to produce four-electrode co-planar metal-insulator-metal nanojunctions with an inter-electrode distance down to 10 nm. The e-beam exposure technique is simulated to find the best geometry of the four electrodes. The fabrication process is presented and compared in detail with the simulation. AFM images of four-electrode nanojunctions down to 10 nm are presented. These nanojunctions are well adapted to interconnect hybrid molecular electronic devices.